Low noise memory array

ABSTRACT

A circuit compatible with dynamic random access memories (DRAM) and static random access memories (SRAM) is disclosed. The circuit includes a substrate having a first conductivity type. A trench isolation region ( 850,852 ) is formed in the substrate. The trench isolation region has sides and a bottom formed below a face of the substrate. A first semiconductor region having a second conductivity type ( 868 ) is formed at the bottom of the trench isolation region. A second semiconductor region having the second conductivity type ( 870 ) is formed separately from the first semiconductor region adjacent a first side of trench isolation region and in conductive contact with the first semiconductor region.

This application is a division of Nonprovisional application Ser. No. 13/487,225, filed Jun. 3, 2012, which is a continuation-in-part of Nonprovisional application Ser. No. 13/457,464, filed Apr. 26, 2012, which claims the benefit under 35 U.S.C. §119(e) of Provisional Appl. No. 61/517,972, filed Apr. 27, 2011, which are incorporated herein by reference in their entirety.

BACKGROUND OF THE INVENTION

The present embodiments relate to a low noise memory array architecture suitable for Dynamic Random Access Memories (DRAM), Static Random Access Memories (SRAM), and other memory configurations having complementary bit lines.

Generally, array noise includes any signal transitions that would degrade a data signal either before or during amplification. These signal transitions may be on adjacent bit lines, word lines, column select lines, or other relatively nearby signal lines. The signal transitions are often coupled to the data signal through parasitic capacitance due to the close proximity of the interfering signal lines. Array noise problems, therefore, tend to increase with decreasing feature sizes, since the desired data signal decreases while the parasitic capacitance increases.

FIG. 1 is a diagram of a memory array of the prior art showing adjacent bit lines having a folded bit line architecture in a triple twist configuration. The memory array includes sense amplifiers 100, 110, and 120. In the following discussion a signal bit line includes at least part of an active memory cell that is being read or written. A reference bit line has a capacitance that is substantially equal to the signal bit line capacitance and is set to a reference voltage. Signal bit lines of each sense amplifier are depicted as bold lines, and reference bit lines are depicted as normal weight lines. For example, sense amplifier 100 is connected to reference bit line 102 and signal bit line 104. Sense amplifier 110 is connected to reference bit line 112 and signal bit line 114. Sense amplifier 120 is connected to reference bit line 122 and signal bit line 124.

Referring to FIG. 2, there is a cross-sectional view of adjacent bit line conductors as in FIG. 1 showing parasitic capacitors. Here and in the following discussion, parasitic capacitors are not separate discrete components but have non negligible capacitance due to the proximity of adjacent bit line conductors. The diagram shows adjacent bit line conductors 204, 206, and 208. Parasitic fringe capacitor C_(F) 214 is between adjacent bit lines 204 and 206. Likewise, parasitic fringe capacitor C_(F) 216 is between adjacent bit lines 206 and 208. There are also upper 200 and lower 202 conductors adjacent the bit lines. Conductor 200 may comprise overlying word lines of other signal lines. Conductor 202 may be a substrate or other signal lines. Parasitic planar capacitor 210 is between conductor 200 and bit line 206 and has a value of αC_(P), where α is a real number between 0 and 1. Parasitic planar capacitor 212 is between conductor 202 and bit line 206 and has a value (1−α)C_(P). For the purpose of the following discussion the total parasitic fringe capacitance to each bit line is 2C_(F), and the total parasitic planar capacitance to each bit line is C_(P) as will be discussed in detail.

Referring now to FIG. 3, there is a diagram of a memory array as in FIG. 1 showing major parasitic fringe capacitors C₀ through C₇ for a triple twist bit line configuration. Word line 300 selects three memory cells represented by small circles. These memory cells each develop data signals on their respective signal bit lines shown in bold and connected to respective sense amplifiers 100, 110, and 120. Reference bit lines shown in normal line weights are also connected to respective sense amplifiers 100, 110, and 120. For the case where all three memory cells store a 1, there is no charge transfer through parasitic capacitors C₀ or C₆, because the change of voltage with respect to time (dv/dt) on all signal bit lines is substantially the same. Likewise, there is no charge transfer through parasitic capacitors C₂ or C₄, because dv/dt on all reference bit lines is substantially the same. However, the signal bit line 302 of sense amplifier 110 couples charge to the reference bit lines of sense amplifiers 100 and 120 through parasitic capacitors C₃ and C₅, respectively. In a similar manner, the signal bit lines of sense amplifiers 100 and 120 couple charge to the reference bit line 304 of sense amplifier 110 through parasitic capacitors C₁ and C₇, respectively. The total coupling to the reference bit line 304 of sense amplifier 110, therefore, is the coupling from the signal bit line 302 (C_(F)) plus the coupling through parasitic capacitors C₁ and C₇ (C_(F)/2), where C_(F) is the fringe capacitance between two adjacent bit lines for their total length.

FIG. 4 is a schematic diagram showing the capacitive coupling to the reference bit line 304 of sense amplifier 110 (FIG. 3). When word line 300 activates the memory cells of FIG. 3, a voltage V(1) is developed on each signal bit line across planar parasitic capacitor C_(P) 400. A fraction of this voltage is coupled through parasitic fringe capacitor 402 (1.5 C_(F)). The noise voltage on reference bit line 304, therefore, is equal to V(1)/(1+2C_(P)/3C_(F)). This noise voltage (Vn) on reference bit line 304 reduces the difference voltage between signal bit line 302 and reference bit line 304. For example, when C_(P) is equal to C_(F), the resulting signal to noise ratio (V(1)/Vn) is 1.67. Under worst case conditions, this may require slower sensing by amplifier 110 and may result in read errors. Thus, there is a need for noise reduction in memory arrays.

Referring to FIG. 5, there is a diagram of a memory array having an open architecture in a cross point configuration. Here and in the following discussion a cross point configuration means that a memory cell is placed at every intersection of a word line and bit line. Typically less area is required for a cross point array than for a folded array. According to previous estimates, a memory cell in a folded array may require 8F² as compared to a memory cell in a cross point array that requires 4F² to 6F² of cell area, where F is a minimum feature size. FIG. 5 illustrates major parasitic fringe capacitors C_(F) for an open architecture in a cross point configuration. Word line 512 selects four memory cells represented by small circles. These memory cells each develop data signals on their respective signal bit lines shown in bold and connected to respective sense amplifiers 500 and 502. Reference bit lines shown in normal line weights are also connected to respective sense amplifiers 500 and 502. For the case where each of memory cells 504 store a 1 and memory cell 510 stores a 0, there is substantial charge transfer through parasitic capacitors C_(F), due to the change of voltage with respect to time (dv/dt) between signal bit lines. FIG. 6 is a schematic diagram showing the capacitive coupling to the signal bit line of sense amplifier 502 (FIG. 5). When word line 512 activates the memory cells of FIG. 5, a voltage V(1) is developed on signal bit lines of sense amplifiers 500 across planar parasitic capacitor C_(P) 600. A fraction of this voltage is coupled through parasitic fringe capacitor 602 (2 C_(F)). The noise voltage imparted to the signal bit line 508 of sense amplifier 502, therefore, is equal to V(1)/(1+C_(P)/2C_(F)). This noise voltage (Vn) on the signal bit line reduces the difference voltage between the signal bit line and the reference bit line. For example, when C_(P) is equal to C_(F), the resulting signal to noise ratio (V(1)/Vn) is 1.5. This is worse than the folded architecture of FIG. 3 and may require even slower sensing by amplifier 502. Thus, there is an even greater need for noise reduction in memory arrays having a cross point configuration.

BRIEF SUMMARY OF THE INVENTION

In a preferred embodiment of the present invention, a circuit is formed on a substrate having a first conductivity type. A trench isolation region is formed in the substrate. The trench isolation region has sides and a bottom formed below a face of the substrate. A first semiconductor region having a second conductivity type is formed at the bottom of the trench isolation region. A second semiconductor region having the second conductivity type is formed separately from the first semiconductor region adjacent a first side of the trench isolation region and in conductive contact with the first semiconductor region.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a diagram of a memory array of the prior art having a triple twist bit line configuration;

FIG. 2 is a diagram of parasitic capacitance components of a bit line (BL);

FIG. 3 is a diagram showing parasitic fringe capacitance components for the memory array of FIG. 1;

FIG. 4 is a schematic diagram showing noise voltage coupled to a reference bit line due to fringe capacitance;

FIG. 5 is a diagram of a memory array of the prior art having a cross point configuration and showing parasitic fringe capacitance components;

FIG. 6 is a schematic diagram showing noise voltage coupled to a signal bit line due to fringe capacitance;

FIG. 7A is a diagram of an embodiment of a memory array of the present invention;

FIG. 7B is a schematic diagram of a word line drive circuit that may be used with the memory array of FIG. 7A;

FIG. 7C is a plan view of the memory cells of the memory array of FIG. 7A;

FIG. 8A is a schematic diagram of sense amplifier 700 of FIG. 7A;

FIG. 8B is a schematic diagram of sense amplifier 704 of FIG. 7A;

FIG. 9 is a circuit diagram of a sense amplifier and control circuit of the present invention that may be used with the memory array of FIG. 7A;

FIG. 10 is a timing diagram showing operation of the circuit of FIG. 9;

FIG. 11 is a circuit diagram of a sense amplifier and control circuit as in FIG. 7A when a precharge voltage (VPC) is equal to a reference voltage (VREF);

FIG. 12 is a diagram of another embodiment of a memory array of the present invention that may be used with static random access memory cells;

FIG. 13 is a memory map of a virtual subarray when physical column address Ca0 is converted to row address RA8 in the circuit of FIG. 7B;

FIG. 14 is a schematic diagram of a subarray comprising an open bit line architecture merged with a folded bit line architecture;

FIG. 15 is a schematic diagram of a subarray comprising an open bit line architecture having one-transistor, one-capacitor (1T-1C) memory cells merged with a folded bit line architecture having two-transistor, two-capacitor (2T-2C) memory cells;

FIG. 16 is a plan view of a partial subarray having shallow trench isolation with a buried guard band; and

FIGS. 17A through 17C are a cross sectional views showing fabrication of the partial subarray of FIG. 16 as viewed along the plane A-A′.

DETAILED DESCRIPTION OF THE INVENTION

The preferred embodiments of the present invention provide significant advantages over memory arrays of the prior art as will become evident from the following detailed description.

Referring to FIG. 7A, there is an embodiment of a memory array of the present invention. The memory array includes sense amplifiers 700 and 704. Each sense amplifier includes a respective pair of bit lines. Each bit line includes a plurality of memory cells such as memory cells 714 and 716. Memory cells 714 are coupled to respective bit lines by n-channel transistors. Correspondingly, memory cells 716 are coupled to respective bit lines by p-channel transistors. A word line, such as word line 708, selects a row of memory cells during a read operation. Word line 708 is driven by word line drive circuit 724 and will go positive (+Vp) in response to high levels of word line enable signal WLEN and column address signal Ca0. Alternatively, word line 708 will go negative (−Vp) in response to high levels of word line enable signal WLEN and complementary column address signal /Ca0. Thus, a positive level (+Vp) of word line 708 will select memory cells such as memory cell 714 while memory cells such as memory cell 716 remain unselected. Likewise, a negative level (−Vp) of word line 708 will select memory cells such as memory cell 716 while memory cells such as memory cell 714 remain unselected.

The selected memory cells transfer stored data signals to their respective signal bit lines. These data signals are then amplified by their respective sense amplifiers as will be explained in detail. For example, when word line 708 selects memory cell 714, a stored data signal is transferred to signal bit line 710. Reference bit line 712 is charged to a voltage that is between voltages produced on the signal bit line by a stored one and stored zero. For either data state, therefore, sense amplifier 700 receives a difference voltage between signal bit line 710 and reference bit line 712. Sense amplifiers 704 remain inactive during this read operation. Bit lines 706 remain at a stable precharge voltage so that no array noise is coupled to signal bit line 710 or to reference bit line 712 by adjacent bit lines 706. This advantageously provides a maximum difference voltage to sense amplifier 700 during the read operation. Moreover, sense amplifier 700 is not influenced by the data state of nearby active sense amplifiers during the read operation. Bit lines at the ends of the memory array are preferably separated by isolation lines 720 and 722. These isolation lines may be grounded, held at the precharge voltage, or any available and stable voltage.

In an alternative embodiment of the present invention, isolation lines 722 may be omitted and the end subarrays of a memory array may be terminated as shown at FIG. 14. A left bank of sense amplifiers, such as sense amplifier 700, is formed with an open bit line architecture. A first bit line 754 is connected to sense amplifier 700 and extends to the right. A second and complementary bit line 752 is connected to sense amplifier 700 and extends parallel to the first bit line and to the left. A right bank of sense amplifiers, such as sense amplifier 704, is formed with a folded bit line architecture as described in U.S. Pat. No. 5,034,920, issued Jul. 23, 1991, and incorporated by reference herein in its entirety. A third bit line 756, connected to sense amplifier 704 via lead 762, extends to the left, adjacent and parallel to bit line 754. A fourth and complementary bit line 758, connected to sense amplifier 704 via lead 760, extends to the right, adjacent and parallel to the first bit line. This embodiment of the present invention advantageously doubles the number of memory cells in the end subarrays. Moreover, the signal-to-noise ratio at the end sense amplifiers is substantially better than for memory cells in the center of the memory array, since the bit line capacitance of each of bit lines 756 and 758 is approximately half of the bit line capacitance of bit line 754. The improved signal-to-noise ratio and reduced bit line capacitance permits the use of substantially smaller end sense amplifiers 704.

In another embodiment of the present invention, isolation lines 722 may be omitted and the end subarrays of a memory array may be terminated as shown at FIG. 15. A left bank of sense amplifiers, such as sense amplifier 700, is formed with an open bit line architecture. A first bit line 774 is connected to sense amplifier 700 and extends to the right. A second and complementary bit line 772 is connected to sense amplifier 700 and extends parallel to the first bit line and to the left. A right bank of sense amplifiers, such as sense amplifier 704, is formed with a folded bit line architecture having two-transistor, two-capacitor (2T-2C) memory cells. Here, one transistor and one capacitor of the 2T-2C memory cell are illustrated by the circle 780. The other transistor and capacitor of the 2T-2C memory cell is illustrated by the circle 782. A third bit line 776 connected to sense amplifier 704 extends to the left, adjacent and parallel to bit line 774. A fourth and complementary bit line 778 connected to sense amplifier 704 extends to the left, adjacent and parallel to the first bit line. This embodiment of the present invention advantageously increases the number of memory cells in the end subarrays by approximately 50%. Moreover, the signal-to-noise ratio at the end sense amplifiers is substantially better than for memory cells in the center of the memory array, since one half of the 2T-2C memory cell will store +/−Va. This approximately doubles a difference voltage available for sensing at the end sense amplifiers 704. The resulting improved signal-to-noise ratio permits the use of substantially smaller end sense amplifiers 704.

Turning now to FIG. 7B, there is a schematic diagram of a word line drive circuit that may be used with the memory array of FIG. 7A. In a preferred embodiment of the present invention, control signals and logic gates of the word line drive circuit operate between positive (+Vp) and negative (−Vp) voltage supplies. The circuit includes p-channel drive transistor 728 having a current path connected between positive voltage supply +Vp and word line 708. The circuit further includes n-channel drive transistor 734 having a current path connected between negative voltage supply −Vp and word line 708. When word line enable signal WLEN is low, inverter 736 applies a high level signal to n-channel transistor 738. This turns on n-channel transistor 738 and holds word line 708 at ground or Vss. Word line 708 is selected when word line enable signal WLEN goes high. Least significant column address signal Ca0 goes high to select memory cells of even numbered columns. Alternatively, least significant complementary column address signal /Ca0 goes high to select memory cells of odd numbered columns. For example, when WLEN and Ca0 are both high, NAND gate 730 produces a low output signal to turn on p-channel drive transistor 728 and drive word line 708 to +Vp. A corresponding low level of /Ca0 produces a low output from AND gate 732 so that n-channel drive transistor 734 remains off. When WLEN and /Ca0 are both high, AND gate 732 produces a high output signal to turn on n-channel drive transistor 734 and drive word line 708 to −Vp. A corresponding low level of Ca0 produces a high output from NAND gate 730 so that p-channel drive transistor 728 remains off.

In order to maintain compatibility with multiplexed row and column addresses according to current dynamic random access memory architecture, a preferred embodiment of the present invention uses physical column address Ca0 as a most significant row address RA8 of a subarray. For example, the subarray of FIG. 13 may include 256 physical rows or word lines and 256 physical columns or bit lines. When physical column address Ca0 is used as most significant row address RA8, the virtual memory map of the subarray is shown at FIG. 13. The subarray is bounded by sense amplifier bank 700 on the right and sense amplifier bank 704 on the left, having sense amplifiers as shown at FIGS. 8A and 8B, respectively. One of 256 rows (word lines) in the subarray is selected by row address signals RA0 through RA7. One of 128 columns (bit lines) in the subarray is selected by column address signals CA1 through CA7. The most significant virtual row address signal RA8, which is the physical column address Ca0, determines whether the selected word line goes positive or negative as previously described with regard to FIG. 7B. When the selected word line goes positive, the right half of the subarray having n-channel pass gate transistors is selected. Alternatively, when the selected word line goes negative, the left half of the subarray having p-channel pass gate transistors is selected.

Turning now to FIG. 7C, there is a plan view of memory cells of the memory array of FIG. 7A. Vertical stripes such as vertical stripe 708 are word lines. Horizontal stripes without infill are N+ regions. Horizontal stripes with dotted infill are P+ regions. Small squares with black infill are bit line contacts. Here, bit lines are omitted for clarity. Small circles without infill represent storage capacitors of individual memory cells. These storage capacitors may be formed as capacitors over bit lines (COB), capacitors under bit lines (CUB), or trench capacitors as is well known to those of ordinary skill in the art. Details are omitted for clarity. Storage capacitor 714 is selectively connected to bit line contact 740 by n-channel transistor 744. Likewise, storage capacitor 716 is selectively connected to bit line contact 742 by p-channel transistor 746. Thus, a positive voltage (+Vp) on word line 708 will turn on n-channel transistors 744 while p-channel transistors 746 remain off. A negative voltage (−Vp) on word line 708 will turn on p-channel transistors 746 while n-channel transistors 744 remain off. A ground or Vss level on word line 708 will turn off all transistors 744 and 746 for any stored data state. In a preferred embodiment of the present invention the memory cells of FIG. 7C are separated by shallow trench isolation (STI) and formed on a p-type substrate which serves as a bulk terminal for n-channel transistors 744. A shallow n-well is preferably implanted beneath the P+ regions to form a floating bulk terminal for p-channel transistors 746. Such transistors with floating bulk terminals have been extensively studied with regard to silicon-on-sapphire (SOS) and silicon-on-insulator (SOI) processes. In this manner, one half of the memory cells in a row are selected for a positive (+Vp) word line level and the other half of the memory cells in the row are selected for a negative (−Vp) word line level.

Turning now to FIG. 16, there is a plan view of another embodiment of a partial subarray having shallow trench isolation with a buried guard band. The partial subarray includes four word lines such as word line 820. Active areas 830 with no infill are preferably N+ and active areas 832 with dotted infill are preferably P+. Here and in the following discussion, active areas are areas of a semiconductor in which transistors may be formed and in which the N+ and P+ areas may serve as source or drain regions. Every intersection of a word line with an N+ active area forms an n-channel pass gate transistor. Likewise, every intersection of a word line with a P+ active area forms a p-channel pass gate transistor. As previously described with regard to FIG. 7C, small circles without infill represent storage capacitors of individual memory cells. These storage capacitors may be formed as capacitors over bit lines (COB), capacitors under bit lines (CUB), or trench capacitors as is well known to those of ordinary skill in the art. Details are omitted for clarity. Each pass gate transistor and adjacent capacitor preferably form a one-transistor, one-capacitor (1T-1C) memory cell unless specified otherwise. Small squares with solid infill such as 822 are bit line contacts. Active areas 834 and 844 are preferably N+ active areas that terminate the edge of the memory array and do not form memory cells. Small squares with dark infill in active areas 834 and 844 are preferably connected to array supply voltage +Va.

FIGS. 17A through 17C are a cross sectional views showing fabrication of the partial subarray with buried guard band of FIG. 16 viewed along the plane A-A′. The partial subarray is preferably formed at a face of a p-type substrate as shown at FIG. 17A. A thin oxide region 864 is grown at the face of the p-type substrate and a layer of silicon nitride 862 is formed over the oxide layer. A photoresist layer 860 is formed and patterned over the silicon nitride layer 862. Trench regions 850 and 852 are formed by anisotropic etching to a depth greater than the active area junction depth and slightly less than an n-well junction depth as will be described in detail. At FIG. 17B, the photoresist layer 860 is removed, and a thin oxide layer 866 is thermally grown on the side walls and at the bottom of the trenches. An N+ implant of preferably Arsenic (As) or Phosphorus (P) is performed to produce n-type buried guard band regions 868 at the bottom of each trench. At FIG. 17C, an oxide film is deposited by chemical vapor deposition. The silicon nitride region 862 and oxide region 864 are removed and the oxide film is planarized by chemical mechanical polishing (CMP). N-well regions 870 are patterned and implanted under P+ active region 842 and N+ active region 844 to a sufficient depth to electrically contact buried guard band 868. A gate oxide (not shown) is subsequently grown over the active areas. Word lines are patterned and etched and N+ active areas 840 and 844 are implanted to form n-channel pass gates. Likewise, P+ active area 842 is implanted to form p-channel pass gates.

The buried guard band of FIGS. 16 and 17A-17C is highly advantageous for several reasons. First, it forms a buried N+ guard band at the bottom of each isolation trench throughout the memory array. Therefore, it requires no additional layout area within the memory array. Second, the buried N+ guard band is preferably coupled to positive array supply voltage +Va at the edges of the array by N+ active areas 834 and 844 and respective supply lead contacts such as 824. Thus, the positive potential forms a bulk terminal for each p-channel pass gate and requires no additional layout area within the memory cells for surface contacts. Third, the buried N+ guard band 868 and n-well 870 form an excellent minority carrier collector for free electrons in the p-type substrate. Fourth, the grid of buried N+ guard bands 868 within the memory array is formed around and below every active area in the memory array and, therefore, has a very low resistance even at the center of the memory array. Finally, the buried N+ guard bands 868 are compatible with existing complementary metal oxide semiconductor (CMOS) and shallow trench isolation (STI) processes with minor modifications. Thus, they may be advantageously used for peripheral circuits such as row and column decode circuits, sense amplifiers, and peripheral logic gates without the use of conventional N+ guard rings.

Referring now to FIG. 8A, there is a sense amplifier circuit 700 that may be used in the memory array of FIG. 7A. Sense amplifier 700 is connected between a bit line (BL) and a complementary bit line (/BL) and operates between ground or Vss and positive array supply voltage +Va. Array supply voltage +Va has a magnitude approximately an n-channel threshold voltage less than supply voltage +Vp. The sense amplifier includes a cross-coupled latch formed by p-channel transistors 802 and n-channel transistors 804. Here and in the following discussion it should be noted that n-channel transistors 806 and equalization signal EQN need not be included in the sense amplifier and may be centralized in the control circuit of FIG. 9 as will be discussed in detail. Equalization signal EQN remains high when sense amplifier 700 is inactive or unselected. This high level of EQN turns on n-channel transistors 806 and holds BL and /BL to ground or Vss. This low level precharge advantageously affords the full array supply voltage +Va less a bit line reference voltage for p-channel sensing. By way of contrast, an intermediate level precharge voltage near a p-channel transistor threshold voltage would greatly reduce sensing speed and might produce read errors. During a read operation, equalization signal EQN goes low and word line 708 (FIG. 7A) goes high to activate a memory cell 714 and produce a difference voltage between BL and /BL. Sense signal /SEN goes low to turn on p-channel transistor 800 and drive the common source terminal of transistors 802 to +Va. This amplifies the difference voltage on BL and /BL until one of n-channel transistors 804 turns on. This further amplifies the difference voltage until one of the bit lines is driven to +Va and the other is driven to ground or Vss, thereby restoring the voltage level of the memory cell 714. After the voltage level of memory cell 714 is restored, word line 708 returns to ground or Vss and equalization signal EQN returns high to restore the precharge level of sense amplifier 700.

Referring next to FIG. 8B, there is a sense amplifier circuit 704 that may be used in the memory array of FIG. 7A. Sense amplifier 704 is connected between a bit line (BL) and a complementary bit line (/BL) and operates between ground or Vss and negative array supply voltage −Va. Array supply voltage −Va has a magnitude approximately a p-channel threshold voltage less than supply voltage −Vp. The sense amplifier includes a cross-coupled latch formed by p-channel transistors 812 and n-channel transistors 814. Here and in the following discussion it should be noted that n-channel transistors 816 and equalization signal EQP need not be included in the sense amplifier and may be centralized in the control circuit of FIG. 9 as will be discussed in detail. Equalization signal EQP remains high when sense amplifier 704 is inactive or unselected. This high level of EQP turns on n-channel transistors 816 and holds BL and /BL to ground or Vss. This low level precharge advantageously affords the full array supply voltage −Va less a bit line reference voltage for n-channel sensing. By way of contrast, an intermediate level precharge voltage near an n-channel transistor threshold voltage would greatly reduce sensing speed and might produce read errors. During a read operation, equalization signal EQP and word line 708 (FIG. 7A) go low to activate a memory cell 716 and produce a difference voltage between BL and /BL. Sense signal SEN goes high to turn on n-channel transistor 810 and drive the common source terminal of transistors 814 to −Va. This amplifies the difference voltage between BL and /BL until one of p-channel transistors 812 turns on. This further amplifies the difference voltage until one of the bit lines is driven to −Va and the other is driven to ground or Vss, thereby restoring the voltage level of the memory cell 716. After the voltage level of memory cell 716 is restored, word line 708 returns to ground or Vss and equalization signal EQP returns high to restore the precharge level of sense amplifier 704.

Turning now to FIG. 9, there is a sense amplifier and control circuit of the present invention that may be used with the memory array of FIG. 7A. The sense amplifier circuit 906 may be either sense amplifier 700 (FIG. 8A) or sense amplifier 704 (FIG. 8B) as previously described. Sense amplifier circuit 906 is preferably repeated to form a bank of sense amplifiers with corresponding column select (YS) lines. The control circuit includes an equalization circuit having NOR gate 936 and n-channel transistor 934. The control circuit further includes a bias circuit formed by AND gate 954, inverter 952, and n-channel transistors 948 and 950. Operation of the sense amplifier and control circuit will now be described in detail with reference to the timing diagram of FIG. 10.

Prior to a read or write operation, the sense amplifier and control circuit of FIG. 9 is in a precharge state. In this precharge state, word line (WL) 920, column select signal YS, and global column select signal YSG are low. Thus, transistors 902, 930, and 932 are off. Reference word line left (RWL) 922 and reference word line right (RWR) 924 are both high, so n-channel transistors 904, 905, 940, and 942 are on. AND gate 954, therefore, produces a high output at node A to turn on transistor 948. Inverter 952 produces a low output at node B to turn transistor 950 off. Precharge voltage VPC is applied to bit line BL through transistors 948, 940, and 904. Precharge voltage VPC is also applied to complementary bit line /BL through transistors 948, 942, and 905. As previously discussed, VPC is preferably equal to ground or Vss. NOR gate 936 produces a low output (EQ), so transistor 934 is off. Here and in the following discussion, EQ is comparable to either EQN or EQP as previously discussed with regard to FIGS. 8A and 8B.

At time t₁ (FIGS. 9-10), RWL goes low, thereby producing a low level at node A and a high level at node B. The low level of RWL also turns off transistors 904 and 940 and leaves BL floating at VPC. The high level of node B applies VREF to /BL through transistors 950, 942, and 905. At time t₂ when /BL has settled at VREF, RWR goes low, thereby turning off transistors 905 and 942 so that /BL is floating. Next WL 920 goes high to activate memory cell 900 and produce a data signal on BL. The low level of RWR, RWL, and YSG produces a high level EQ to turn on transistor 934 and equalize lines 926 and 928. At time t₃, when a difference voltage is fully developed between BL and /BL, sense amplifier 906 is activated and the difference voltage is amplified as previously described. At time t₄ when the difference voltage is sufficiently amplified, YS goes high to couple BL to line 926 and /BL to line 928. YSG also goes high to turn off n-channel transistor 934, turn on transistors 930 and 932, and apply the amplified difference voltage on lines 926 and 928 to data line DL and complementary data line /DL, respectively. At time t₅, after the data signal on DL and /DL is latched, YS and YSG go low. At time t₆, after the data signal in memory cell 900 is fully restored, WL goes low to store the data signal in memory cell 900. At time t7, sense amplifier 906 is inactivated and returned to a precharge state. Finally, at time t8, RWL and RWR go high to restore the control circuit, BL, and /BL to the precharge state.

The present invention advantageously provides a low noise memory array as previously described with respect to FIG. 7A. Furthermore, the sense amplifier and control circuits of FIG. 9 provide a simple and smaller design than those of the prior art. Since the bit lines are always connected to their respective sense amplifier, there is no need for additional switching circuitry as when a sense amplifier must be shared with left and right memory arrays. Moreover, equalization, precharge, and reference voltage control are preferably centralized in the control circuit need not be distributed throughout the sense amplifier bank. For example, lines 926 and 928 apply the precharge voltage (VPC) to bit lines prior to time t₁ and after time t₈. Between time t₁ and t₂, line 926 floats and line 928 applies reference voltage VREF to /BL. Finally, at time t₄, lines 926 and 928 couple BL and /BL to DL and /DL, respectively.

Turning now to FIG. 12, there is a diagram of another embodiment of a memory array of the present invention that may be used for static random access memories or 2-transistor and 2-capacitor memory cells. The memory array includes sense amplifiers 960, 962, and 970. Each sense amplifier includes a respective pair of bit lines. Each bit line includes a plurality of memory cells such as memory cell 964. A word line, such as word line 974, selects a row of memory cells during a read operation. The selected memory cells, such as memory cell 964, transfer stored data signals to their respective signal bit lines. These data signals are then amplified by their respective sense amplifiers. For example, when word line 974 selects memory cell 964, a stored data signal is transferred to complementary signal bit lines 966 and 968. For either data state, therefore, sense amplifier 960 receives a difference voltage between signal bit lines 966 and 968. Sense amplifiers 970 remain inactive during this read operation. Bit lines 972 remain at a stable precharge voltage so that no array noise is coupled to signal bit lines 966 or 968 by adjacent bit lines 972. This advantageously provides a maximum difference voltage to sense amplifier 960 during the read operation. Moreover, sense amplifier 960 is not influenced by the data state of nearby active sense amplifiers such as sense amplifier 962 during the read operation. As previously discussed, bit lines at the ends of the memory array are preferably separated by isolation lines, which may be grounded, held at the precharge voltage, or any available and stable voltage.

Still further, while numerous examples have thus been provided, one skilled in the art should recognize that various modifications, substitutions, or alterations may be made to the described embodiments while still falling within the inventive scope as defined by the following claims. For example, FIG. 11 is an alternative embodiment of the present invention where VPC is the same as VREF. This is a simplified version of the circuit of FIG. 9 where the common terminal of transistors 940 and 942 may be directly connected to the VPC supply voltage. Thus, transistors 948 and 950, AND gate 954, and inverter 952 may be eliminated. Also, only a single reference word line (RW) is required and operates similar to the previously described RWL. Embodiments of the present invention may be applied to virtually any memory array having complementary bit lines. For example, the present invention may also be applied to a memory array having an open architecture without a cross point configuration. In this case, memory cells are arranged as they would be with a folded architecture and all memory cell access transistors have the same conductivity type. Other combinations will be readily apparent to one of ordinary skill in the art having access to the instant specification. 

What is claimed is:
 1. A circuit, comprising: a substrate having a first conductivity type; a trench isolation region formed in the substrate, the trench isolation region having sides and having a bottom formed below a face of the substrate; a first semiconductor region having a second conductivity type formed at the bottom of the trench isolation region; and a second semiconductor region having the second conductivity type formed separately from the first semiconductor region adjacent a first side of trench isolation region and in conductive contact with the first semiconductor region.
 2. A circuit as in claim 1, comprising: a first active area having a first conductivity type formed at the face of the substrate adjacent the first side of the trench isolation region and the second semiconductor region; and a second active area having the second conductivity type formed at the face of the substrate adjacent a second side of the trench isolation region.
 3. A circuit as in claim 2, wherein the first active area comprises a plurality of first transistors having the first conductivity type, and wherein the second active area comprises a plurality of second transistors having the second conductivity type.
 4. A circuit as in claim 2, wherein the first and second active areas comprise memory cells.
 5. A circuit as in claim 4, wherein the memory cells comprise dynamic random access memory (DRAM) cells.
 6. A circuit as in claim 4, wherein the memory cells comprise static random access memory (SRAM) cells.
 7. A circuit as in claim 2, wherein the first and second active areas comprise transistors of a logic gate.
 8. A circuit, comprising: a substrate having a first conductivity type; a first plurality of active areas, each active area of the first plurality formed in a well having a second conductivity type; a second plurality of active areas, each active area of the second plurality formed in a well having a the first conductivity type and electrically connected to the substrate; a trench isolation region formed in a substrate separating each active area, the trench isolation region having sides and having a bottom formed below a face of the substrate; and a semiconductor region having a second conductivity type formed at the bottom of the trench isolation region and electrically connected to each said well having the second conductivity type.
 9. A circuit as in claim 8, comprising: a first plurality of heavily doped regions having the first conductivity type, each heavily doped region of the first plurality formed within a respective well having the second conductivity type; and a second plurality of heavily doped regions having the second conductivity type, each heavily doped region of the second plurality formed within a respective well having the first conductivity type.
 10. A circuit as in claim 8, comprising: a first plurality of transistors having the first conductivity type, each transistor of the first plurality formed within a respective well having the second conductivity type; and a second plurality of transistors having the second conductivity type, each transistor of the second plurality formed within a respective well having the first conductivity type.
 11. A circuit as in claim 8, comprising: a first plurality of memory cells, each memory cell of the first plurality having a transistor of the first conductivity type formed within a respective well having the second conductivity type; and a second plurality of memory cells, each memory cell of the second plurality having a transistor of the second conductivity type formed within a respective well having the first conductivity type.
 12. A circuit as in claim 8, wherein the semiconductor region is electrically connected to a supply voltage terminal.
 13. A circuit as in claim 8, wherein the first plurality of active areas are electrically connected to a first bit line of a memory array, and wherein the second plurality of active areas are electrically connected to a second bit line of the memory array.
 14. A circuit as in claim 13, wherein the first bit line is parallel and adjacent to the second bit line.
 15. A method of forming a semiconductor device, comprising: forming plural trench isolation regions in a substrate having a first conductivity type, each trench isolation region having sides and a bottom; forming a guard band region having a second conductivity type below the bottom of each trench isolation region; forming a first well region having a first conductivity type in electrical contact with the substrate and adjacent a first side of each trench isolation region; and forming a second well region having a second conductivity type in electrical contact with the guard band region and adjacent a second side of each trench isolation region.
 16. A method as in claim 15, comprising forming an insulating layer adjacent the sides and bottom of each trench isolation region before the step of forming a guard band region.
 17. A method as in claim 15, comprising: forming gate insulating layer over each of the first and second well regions; forming a transistor gate over the insulating layer of each of the first and second well regions; implanting a first heavily doped region having the first conductivity type in each second well region; and implanting a second heavily doped region having the second conductivity type in each first well region.
 18. A method as in claim 15, wherein the transistor gate is a word line of a memory array.
 19. A method as in claim 18, comprising: connecting a first bit line to each first heavily doped region; and connecting a second bit line to each second heavily doped region.
 20. A method as in claim 19, wherein the first and second bit lines are adjacent and parallel. 